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Project ID: 1762-AP
Available for licensing
Conventional CHEMFETs (chemical field effect transistors) are silicon MOSFETs with the gate uncovered to make it chemically sensitive. These gates, made of poly-silicon or metal which are replaced with a chemically sensitive metal, are widely used but are not very effective. Furthermore, due to inefficiencies in removing trapped charges/dipoles after a sensing event, CHEMFET sensors experience a lot of drift in their characteristics with regard to time.
The key difference from established silicon CHEMFET technology is that CHEMFETs use channel charge modulation by dipoles (which have a net charge of zero), whereas in our device we use trapped positive charges, which produce a much greater conductivity modulation. This results in a performance improvement of a factor of 10X to 100X in comparison with existing technology (tested with air-based analytes). A similar increase in sensitivity is expected to be obtained in other media as well. The invention covers inorganic-inorganic four-terminal devices for vapor/gas sensing, as well as inorganic-inorganic four-terminal devices for sensing in aqueous ambients
Water testing, water quality monitoring, glucose level testing, lactic acid level monitoring, disease detection and diagnostics, and various industrial uses
Lab/bench prototype
Ananth Dodabalapur, Ph.D., Electrical and Computer Engineering, The University of Texas at Austin
Jitendra Jain, Licensing Specialist
jjain@otc.utexas.edu
512-471-9055
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